Band structure of strained Gd(0001) films

Strain and strain relief in Gd(0001) films on Mo(112)

The electronic structure of strained and unstrained Gd(0001) has been studied with spin-polarized photoemission spectroscopy and spin-polarized inverse photoemission spectroscopy. In this work, we observed that relaxation of the expansively strained in-plane crystal lattice constant, of Gd(0001) on Mo(112), significantly diminishes the differences in the electronic structure from that observed ...

Stabilizing graphitic thin films of wurtzite materials by epitaxial strain.

Recent theory [Phys. Rev. Lett. 96, 066102 (2006)] and experiment [Phys. Rev. Lett. 99, 026102 (2007)] show that (0001) ultrathin films of wurtzite (WZ) materials surprisingly transform into a stable graphitelike structure, but the stability is limited to thicknesses of only a few atomic layers. Using first-principles calculations of both freestanding and substrate-supported thin films, we pred...

Influence of strain on the atomic and electronic structure of manganite films

A study of the long-range, local and electronic structure of Nd0.5Sr0.5MnO3 films of varying thickness between 500 and 2000 Å has been performed. Local structure measurements at the Sr K-edge reveal a reduction of the Mn–O–Mn bond angles in films below 1000 Å. Spin-polarized measurements reveal splitting of the Mn 3d eg state in the strained region of the films and are consistent with a two-lay...

Magnetotransport properties in „1100...- and „0001...-oriented MnAs films on GaAs substrates

Magnetic-field dependence of the resistivities in MnAs 1100 films on GaAs 001 and MnAs 0001 films on GaAs 111 B is investigated at low temperatures. Correspondence of the features in the longitudinal and transverse resistivities under reorientations of the magnetization enables us to distinguish the anisotropic magnetoresistance effect from the effects originating from the band structure of MnA...

Development of the Gd(0001) band structure with film thickness